1/10 july 2004 stGW40NC60V n-channel 50a - 600v - to-247 very fast powermesh? igbt table 1: general features high current capability high frequency operation up to 50 khz losses include diode recovery energy off losses include tail current lower c res / c ies ratio new generation products with tighter parameter distrubution description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the pow- ermesh ? igbts, with outstanding performances. the suffix ?v? identifies a family optimized for high frequency. applications high frequency inverters smps and pfc in both hard switch and resonant topologies ups motor drivers table 2: order codes figure 1: package figure 2: internal schematic diagram type v ces v ce(sat) (max) @25c i c @100c stGW40NC60V 600 v < 2.5 v 50 a 1 2 3 max clip pressure: 150 n/mm 2 weight: 4.41gr 0.01 to-247 sales type marking package packaging stGW40NC60V GW40NC60V to-247 tube rev. 10 www.datasheet.co.kr datasheet pdf - http://www..net/
stGW40NC60V 2/10 table 3: absolute maximum ratings (1)pulse width limited by max. junction temperature. table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: off table 6: on (#) calculated according to the iterative formula: symbol parameter value symbol v ces collector-emitter voltage (v gs = 0) 600 v v ecr reverse battery protection 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at 25 c (#) 80 a i c collector current (continuous) at 100 c (#) 50 a i cm (1) collector current (pulsed) 200 a p tot total dissipation at t c = 25 c 260 w derating factor 2.08 w/ c t stg storage temperature ? 55 to 150 c t j operating junction temperature min. typ. max. unit rthj-case thermal resistance junction-case 0.48 c/w rthj-amb thermal resistance junction-ambient 50 c/w t l maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.) 300 c symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 1 ma, v ge = 0 600 v i ces collector-emitter leakage current (v ce = 0) v ge = max rating tc = 2 5 c tc=125 c 10 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v , v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40a, tj= 25 c v ge = 15 v, i c = 40a, tj= 125 c 1.9 1.7 2.5 v v i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () -------------------------------------------------------------------------------------------------- = www.datasheet.co.kr datasheet pdf - http://www..net/
3/10 stGW40NC60V electrical characteristics (continued) table 7: dynamic table 8: switching on 2) eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25 c and 125 c) table 9: switching off (3)turn-off losses include also the tail of the collector current. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ce = 15 v , i c = 20 a 20 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1 mhz, v ge = 0 4550 350 105 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 40 a, v ge = 15v, (see figure 20) 214 30 96 nc nc nc i cl turn-off soa minimum current v clamp = 480 v , tj = 150 c r g = 100 ?, v ge = 15v 200 a symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on eon (2) turn-on delay time current rise time turn-on current slope turn-on switching losses v cc = 390 v, i c = 40 a r g =3.3 ? , v ge = 15v, tj= 25 c (see figure 18) 43 17 2060 330 450 ns ns a/s j t d(on) t r (di/dt) on eon (2) turn-on delay time current rise time turn-on current slope turn-on switching losses v cc = 390 v, i c = 40 a r g =3.3 ? , v ge = 15v, tj= 125 c (see figure 18) 42 19 1900 640 ns ns a/s j symbol parameter test conditions min. typ. max. unit t r (v off ) off voltage rise time v cc = 390 v, i c = 40 a, r ge = 3.3 ? , v ge = 15 v t j = 25 c (see figure 18) 25 ns t d ( off ) turn-off delay time 140 ns t f current fall time 45 ns e off (3) turn-off switching loss 720 970 j e ts total switching loss 1050 1420 j t r (v off ) off voltage rise time v cc = 390 v, i c = 40 a, r ge = 3.3 ? , v ge = 15 v tj = 125 c (see figure 18) 60 ns t d ( off ) turn-off delay time 170 ns t f current fall time 77 ns e off (3) turn-off switching loss 1400 j e ts total switching loss 2040 j www.datasheet.co.kr datasheet pdf - http://www..net/
stGW40NC60V 4/10 figure 3: output characteristics figure 4: transconductance figure 5: collector-emitter on voltage vs col- lector current figure 6: transfer characteristics figure 7: collector-emitter on voltage vs tem- perature figure 8: normalized gate threshold vs tem- perature www.datasheet.co.kr datasheet pdf - http://www..net/
5/10 stGW40NC60V figure 9: normalized breakdown voltage vs temperature figure 10: capacitance variations figure 11: total switching losses vs gate re- sistance figure 12: gate charge vs gate-emitter volt- age figure 13: total switching losses vs temper- ature figure 14: total switching losses vs collector current www.datasheet.co.kr datasheet pdf - http://www..net/
stGW40NC60V 6/10 figure 15: thermal impedance figure 16: turn-off soa figure 17: ic vs frequency for a fast igbt suitable for high frequency appli- cations, the typical collector current vs. maximum operating frequency curve is reported. that fre- quency is defined as follows: f max = (p d - p c ) / (e on + e off ) 1) the maximum power dissipation is limited by maximum junction to case thermal resistance: p d = ? t / r thj-c considering ? t = t j - t c = 125 c- 75 c = 50 c 2) the conduction losses are: p c = i c * v ce(sat) * with 50% of duty cycle, v cesat typical value @125 c. 3) power dissipation during on & off commuta- tions is due to the switching frequency: p sw = (e on + e off ) * freq. 4) typical values @ 125 c for switching losses are used (test conditions: v ce = 390v, v ge = 15v, r g = 3.3 ohm). furthermore, diode recovery en- ergy is included in the e on (see note 2), while the tail of the collector current is included in the e off measurements (see note 3). www.datasheet.co.kr datasheet pdf - http://www..net/
7/10 stGW40NC60V figure 18: test circuit for inductive load switching figure 19: switching waveforms figure 20: gate charge test circuit www.datasheet.co.kr datasheet pdf - http://www..net/
stGW40NC60V 8/10 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
9/10 stGW40NC60V table 10: revision history date revision description of changes 13-jul-2004 9 stylesheet update. no content change 14-jul-2004 10 some datas have been updated www.datasheet.co.kr datasheet pdf - http://www..net/
stGW40NC60V 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. www.datasheet.co.kr datasheet pdf - http://www..net/
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